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| Semiconductor RFP2N08, RFP2N10 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09282. July 1998 Features * 2A, 80V and 100V * rDS(ON) 1.05 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information G PART NUMBER RFP2N08 RFP2N10 PACKAGE TO-220AB TO-220AB BRAND RFP2N08 RFP2N10 S NOTE: When ordering, use entire part number. Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 2883.1 5-1 RFP2N08, RFP2N10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP2N08 80 80 2 5 20 25 0.2 -55 to 150 300 260 RFP2N10 100 100 2 5 20 25 0.2 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1M) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0 100 80 VGS(TH) IDSS VGS = VDS , ID = 250A (Figure 8) VDS = Rated BVDSS , TC = 25oC VDS = 0.8 x Rated BVDSS , TC = 125oC Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 0V, VDS = 25V, f =1MHz (Figure 9) VGS = 20V, VDS = 0 ID = 2A, VGS = 10V (Figures 6, 7) ID = 2A, VGS = 10V ID 1A, VDD = 50V, RG = 50, RL = 25, VGS = 10V (Figures 10, 11, 12) 2 17 30 30 17 4 1 25 100 1.05 2.1 25 45 45 25 200 80 25 5 V V V A A nA V ns ns ns ns pF pF pF oC/W Electrical Specifications PARAMETER MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFP2N10 RFP2N08 Gate Threshold Voltage Zero-Gate Voltage Drain Current Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 2A ISD = 2A, dISD/dt = 50A/s TEST CONDITIONS MIN 100 TYP MAX 1.4 UNITS V ns 5-2 RFP2N08, RFP2N10 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER Unless otherwise Specified 2.4 2.2 2.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 125 150 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 1.0 0.8 0.6 0.4 0.2 0 TC, CASE TEMPERATURE (oC) 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 OPERATION IN THIS AREA LIMITED BY rDS(ON) ID , DRAIN CURRENT (A) TJ = MAX RATED TC = 25oC VGS = 10V ID , DRAIN CURRENT (A) VGS = 9V VGS = 20V 2.5 VGS = 8V 2.0 1 PULSE DURATION = 80s TC = 25oC VGS = 7V 0.10 RFP2N010 VGS = 6V 1A VGS = 5V VGS = 4V RFP2N08 0.01 1 10 100 1000 0 1 VDS , DRAIN TO SOURCE VOLTAGE (V) 2 3 4 5 6 7 8 VDS , DRAIN TO SOURCE VOLTAGE (V) 9 10 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) rDS(ON) , DRAIN TO SOURCE ON RESISTANCE () VDS = 10V PULSE DURATION = 250s 1.4 1.2 1.0 0.8 0.6 0.4 0.2 TC = 125oC TC = 25oC 2.5 2.0 1.5 1.0 0.5 TC = -40oC TC = 25oC 0 TC = 125oC TC = 40oC TC = 25oC TC = -40oC VGS = 10V PULSE DURATION = 250s 0 0.5 1.0 1.5 ID , DRAIN CURRENT (A) 2.0 2.5 TC = 125oC 10 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 RFP2N08, RFP2N10 Typical Performance Curves 2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE NORMALIZED GATE THRESHOLD VOLTAGE ID = 2A, VGS = 10V 1.5 Unless otherwise Specified (Continued) 1.4 VGS = VDS, ID = 250A 1.2 1.0 1.0 0.5 0.8 0 -50 0 50 100 150 200 0.6 -50 TJ, JUNCTION TEMPERATURE (oC) 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 240 200 C, CAPACITANCE (pF) 160 120 CISS 80 COSS 40 0 0 CRSS 10 20 30 40 50 60 VDS , DRAIN TO SOURCE VOLTAGE (V) 70 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE VDS , DRAIN TO SOURCE VOLTAGE (V) 100 VGS , GATE TO SOURCE VOLTAGE (V) BVDSS VDDD = VDSS 75 GATE TO SOURCE VOLTAGE VDSS = VDSS 10 8 50 RL = 50 IG(REF) = 0.095mA VGS = 10V 0.75 VDSS 0.50 VDSS 0.25 VDSS 0.75 VDSS 0.50 VDSS 0.25 VDSS 6 4 25 2 0 20 IG(REF) IG(ACT) TIME (s) 80 IG(REF) IG(ACT) 0 NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4 |
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